Abstract
Total-ionizing-dose responses are investigated for fully-depleted silicon-on-insulator (FDSOI) ring oscillators (RO), in three-dimensional (3D) architectures. Operational frequencies decrease after irradiation in these devices due primarily to threshold voltage shifts and transconductance degradation due to interface-trap buildup in the pull-up <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> MOSFETs. 3D sequentially-integrated FDSOI ROs fabricated in the bottom layer of the 3D structure show the most significant frequency degradation. AC-bias irradiation leads to greater shifts than static-bias irradiation in these devices due to enhanced interface-trap buildup. Circuit simulations reinforce the relative importance of transconductance degradation in pull-up <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</i> MOSFETs to the TID response of these ROs.
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