Abstract
This paper deals with the effects of 60Co gamma irradiation on punch-through commercial insulated gate bipolar transistor turn-on switching behaviour. The response of the threshold voltage and the turn-on switching parameters under three different in situ gate biases are described. Charge trapping in the gate oxide causes the decrease of the threshold voltage. It is shown that the decrease of this parameter and the decrease of the Miller plateau level result in a decrease of the collector current rise-time, the collector–emitter voltage fall-time, the turn-on switching energy and in an increase of the peak of the turn-on switching instantaneous power and of the turn-on overshoot collector current.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
