Abstract
It is important to quantify the effect of oxide film on the total hemispherical radiation properties. This paper investigated the radiation properties of high-temperature oxidized 99.9% purity nickel. The scale-growth kinetics of nickel oxide film formed on nickel at oxidation temperature of 900°C was analyzed. The apparent total hemispherical emissivities of oxidized nickel with various oxide film thicknesses were measured at high temperatures using a steady-state calorimetric technique. The dependence between the total hemispherical emissivity and oxide scale at various temperatures was determined.
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