Abstract
The total-dose radiation hardness of hardened MOS transistors is experimentally shown to be degraded by hydrogen gas commonly trapped in hermetic-ceramic-package cavities. This introduces another variable to be considered in the manufacture and hardness assurance of total-dose-hardened integrated circuits. The observation also extends the link between hydrogen and interface-state formation to the understanding of hydrogen's role in ionizing radiation effects. It is concluded from experiments in which hydrogen is diffused into irradiated oxides after Co-60 exposure that the diffusing hydrogen interacts with independently created radiation damage to form interface states. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
