Abstract
Abstract Dirac fermions are a distinctive feature of topological insulator (TIs) due to the existence of topologically protected surface states, making TIs a promising choice for long-wavelength photodetection. However, TI-based photodetection often suffers from significant dark current. This paper demonstrates broadband detection through the direct generation of photocarriers in metal-MnBi2Te4-metal structures at room temperature. By integrating MnBi2Te4 and Bi2Te3 into van der Waals (vdW) structures, the heterostructure device can reduce dark current and have excellent sensitivity at room temperature. Especially, MnBi2Te4/Bi2Te3 photodetectors have, fast response times (<1 μs) and low noise equivalent power (NEP <0.5 nW Hz1/2) at self-powered mode due to PTE conversion. The MnBi2Te4/Bi2Te3 photodetector detects low-energy photons through the hybrid integration of new low-dimensional materials, and already suitable for imaging applications, further emphasizing the unique advantages of topological insulators in the field of THz technology.&#xD;
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