A potential absorber for PHz electronics using Sn/h-BN Van der Waals structure: A hybrid DFT and macroscopic investigations

Abstract

The rapid rollout of the next-generation network has sparked discussion about an entirely new set of optical techniques. To prepare the path for future wireless network growth, we must investigate the PHz band’s potential for supporting infrastructures. Engineered materials might play a perceptible role in designing such critical PHz band components. This work demonstrates an efficient Stanene/hexagonal- Boron Nitride heterostructure-based metasurface absorber for the PHz regime. An ab-initio computational approach has been employed to estimate the optical and electronic behavior of Sn/h-BN heterostructure . A high absorption coefficient and excellent optical characteristics are obtained by the proposed metasurface absorber based on Sn/h-BN Van der Waals (vdW) structure. The absorption of PHz waves by a metasurface comprising a bi-periodic array of meta-atoms on top of a dielectric substrate backed by gold is simulated using CST Microwave Studio™. By utilizing the Finite Integral Techniques (FIT), a high absorptance (around 0.98) is achieved over a 0.45 PHz wide spectral regime for normal incidence, regardless of the polarization states. • A Sn/h-BN Van der Waals structure has been investigated for device application. • A hybrid DFT and macroscopic approach is used to design an optical absorber. • High absorption coefficient and anisotropic properties are exhibited by the investigated materials. • A high absorptance (around 98%), were achieved over a 0.45 PHz wide spectral regime for normal incidence.