Abstract
Room temperature CW and pulsed lasing of top-surface-emitting, vertical-cavity, GaAs quantum-well lasers was achieved at ~845 nm. The active gain medium was four 100 Å thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing was used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current was 2.2 mA for CW and pulsed operation using 10 μm diameter lasers. Differential quantum efficiency was about 20%. Minimum threshold current density per quantum well of 360 A/cm2 was obtained.
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