Abstract
Room-temperature CW and pulsed lasing of top-surface-emitting, vertical-cavity, self-aligned, GaAs quantum-well lasers is achieved at ~845 nm. The active gain medium is four 100-Å-thick GaAs quantum wells. The whole structure is grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing is used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current is 2.2 mA for CW and pulsed operation using 10-jam diameter lasers. Differential quantum efficiency is about 20%. Minimum threshold current density per quantum well of 360 A/cm2 is obtained. Maximum CW output power better than 1.5 mW is obtained.KeywordsMolecular Beam EpitaxyGaAs SubstrateThreshold Current DensityDiameter LaserDifferential Quantum EfficiencyThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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