Abstract
Gradient stripe patterns of Single-Walled Carbon Nanotubes (SWCNTs) were fabricated by using the evaporation-induced self-assembly technique. Additionally, the nonvolatile thin-film transistors (TFTs) with SWCNTs and (Bi,Nd)4Ti3O12 (BNT) insulators were fabricated. The retention characteristics were investigated in Pt/SWCNTs/BNT/LaNiO3 and LaNiO3/SWCNTs/BNT/LaNiO3 structures. Results revealed that LaNiO3/SWCNTs/BNT/LaNiO3 TFTs demonstrate larger on-state current, wider memory window, better fatigue endurance performance and retention characteristics, compared with Pt/SWCNTs/BNT/LaNiO3 TFTs because of the involvement of the oxide conductive electrodes. These results suggest that the SWCNTs/BNT TFTs with LaNiO3 as the electrodes are suitable for next-generation nonvolatile memory devices and integrated circuits.
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