Carbon Nanotube Nonvolatile Thin-Film Transistors With (Bi,Nd)<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Gate Insulators

Abstract

Single-walled carbon nanotube (SWCNT) nonvolatile thin-film transistors (TFTs) with (Bi,Nd) 4 Ti 3 O 12 (BNT) gate insulators were fabricated. The electrical properties of BNT films and SWCNT/BNT TFTs were investigated. The subthreshold swing, the threshold voltage, the channel mobility, and the ON/OFF ratio of SWCNT/BNT TFTs reach to 62.5 mV/decade, 0.45 V, 1.3 × 10 3 cm 2 /Vs, and 1.5 × 10 7 , respectively. Notably, the device shows a memory window of ~4.1 V and a long retention time of ~10 7 s. These mainly attribute to the SWCNTs channel and BNT ferroelectric gate insulator, which induce much larger charge in channel layer. These results suggest that the SWCNT/BNT TFTs are suitable for the next-generation nonvolatile memory devices and integrated circuits.