Abstract
The High Energy X-ray Imaging Technology (HEXITEC) ASIC is designed on a 0.35 μm CMOS process to read out CdTe or CZT detectors and hence provide fine-pixellated spectroscopic imaging in the range 2–200 keV. In this paper, we examine the tolerance of HEXITEC to both potentially destructive cumulative and single event radiation effects. Bare ASICs are irradiated with X-rays up to a total ionising dose (TID) of 1 Mrad (SiO2) and bombarded with heavy ions with linear energy transfer (LET) up to 88.3 MeV mg−1 cm−2. HEXITEC is shown to operate reliably below a TID of 150 krad, have immunity to fatal single event latchup (SEL) and have high tolerance to non-fatal SEL up to LETs of at least 88.3 MeV mg−1 cm−2. The results are compared to predictions of TID and SELs for various Earth-orbits and aluminium shielding thicknesses. It is found that HEXITEC's radiation tolerance to both potentially destructive cumulative and single event effects is sufficient to reliably operate in these environments with moderate shielding.
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