Abstract

In this paper, time-of-flight secondary ion mass spectrometry (ToF-SIMS) under static conditions was used to investigate self-assembled monolayers (SAMs) of octadecylphosphonic acid (OPA) formed on freshly cleaved muscovite mica substrates. The coverage of OPA on mica ranged from 20 to 100%, with a film thickness of 1.7+/-0.2 nm, which was determined by atomic force microscopy (AFM) imaging. The relative intensity of the specific secondary ion species associated with the OPA and with the exposed mica substrate exhibited good correlation with surface coverage. An excellent correlation was also observed (R2=0.98) between the relative SIMS [OPA-H]- intensity and the surface carbon concentration (OPA C 1s, in atomic %) from XPS at the prescribed surface coverage. The observation of positive and negative OPA molecular attachment of secondary ions involving the substrate species is discussed in terms of the chemical affinity of the OPA phosphonate headgroup for the cleaved mica surface as well as the sampling depth. In addition, the OPA molecular attachment species formed with the potassium ions on the cleaved mica substrate dominated the positive secondary ion mass spectrum in the high-mass range. A temperature-dependent, ToF-SIMS study employing in situ heating of a 100% coverage OPA monolayer revealed that the molecules begin to diffuse above approximately 80 degrees C, resulting in a decrease in the relative secondary ion yield of the OPA-specific secondary ions. This observation is hypothesized to be due to a decrease in the effective coverage of the substrate by the OPA molecules, which in turn could be due to the formation of multilayers upon heating in an effort to minimize the energy of the system. The interesting behavior of the novel OPA dimer species as a function of temperature is also reported. It was observed that the relative intensity of OPA and the mica-specific secondary ion peak intensities to that of Si (mica substrate) provides an effective means to estimate the change in coverage at elevated temperatures.

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