Abstract
A method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron-beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single-electron transistor which operated at T<0.4 K and had a moderate charge noise of 2.5×10 −3 e/ Hz at 10 Hz . Based on non-linearities in the current–voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV . The non-superconducting Ti junctions can be useful in several applications.
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