Abstract
Deep-level transient spectroscopy is used to determine the energetic positions of the deep levels induced by titanium in the silicon band gap. The experimental results confirm that titanium is an amphoteric center with an acceptor level at Ec–0.09 eV and two donor levels at Ec−0.30 eV and Ev+0.26 eV. The properties of the first donor level are analyzed in more detail, and an explanation is proposed for the absence of the Poole–Frenkel effect at this level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
