Abstract
TE-pass and TM-pass polarizers based on silicon-on-insulator platform are proposed and analyzed. The suggested structures for both the polarizers are truly CMOS-compatible relying on the titanium nitride as an alternative plasmonic material for its favorable properties. The analysis predicts 0.0635-dB insertion loss (IL) and 20-dB extinction ratio (ER) for the TE-pass polarizer at 3.5-μm active device length. The TM-pass polarizer has an IL of 1 dB and an ER of 20 dB at 2.84-μm-long device, at a central wavelength of 1.55 μm.
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