Abstract
Transverse-magnetic (TM) and transverse-electric (TE) pass polarizers based on a silicon-on-insulator platform are studied and analyzed. The proposed structures are CMOS-compatible based on indium tin oxide and zirconium nitride as alternative plasmonic materials. The bi-metallic combination of the plasmonic materials exhibit large coupling between one of the modes (TE or TM) in the silicon core and the surface plasmon mode, while the other mode can propagate with low losses. The numerical simulations for the TE-pass polarizer predict 32.7dB extinction ratio (ER) and 0.13dB insertion loss (IL) at a compact device length of 1.5μm. Additionally, the TM-pass polarizer has 31.5dB ER and 0.17dB IL at a device length of 2μm at an operating wavelength of 1.55μm.
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