TiS 2 whisker growth by a simple vapor-deposition method

Abstract

We reported the synthesis of titanium disulfide (TiS 2) whiskers on Ni-coated Si wafer via a simple vapor transport deposition method at 630 °C. To our knowledge, this is the first time to report the synthesis of TiS 2 whiskers with exact stoichiometric composition. By gently controlling the configuration of S and Ti sources and Si substrate during vapor reaction, TiS 2 whiskers could be successfully acquired. TiS 2 whiskers are single crystalline with exact stoichiometric composition. This kind of solid sulfide source method also can be used for synthesis of other transitional metal dichalcogenide whiskers. We believe that the successful growth of TiS 2 whiskers would provide significant theoretical and experimental opportunities for researchers.