Abstract
We reported the synthesis of titanium disulfide (TiS 2) whiskers on Ni-coated Si wafer via a simple vapor transport deposition method at 630 °C. To our knowledge, this is the first time to report the synthesis of TiS 2 whiskers with exact stoichiometric composition. By gently controlling the configuration of S and Ti sources and Si substrate during vapor reaction, TiS 2 whiskers could be successfully acquired. TiS 2 whiskers are single crystalline with exact stoichiometric composition. This kind of solid sulfide source method also can be used for synthesis of other transitional metal dichalcogenide whiskers. We believe that the successful growth of TiS 2 whiskers would provide significant theoretical and experimental opportunities for researchers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
