Abstract
This paper analyzed the contact resistance between inkjet-printed silver source/drain(S/D) electrodes and organic semiconductor layer of Organic Thin-film Transistors(OTFTs) using transmission line method(TLM).Spin-coated PVP thin-film and Tips-pentacene thin-film were used as gate dielectric layer and semiconductor layer,respectively.S/D electrodes with four different channel lengths of 200,250,300 μm and 400 μm were inkjet-printed,and the annealed time of different semiconductor layers was 2 h,6 h and 10 h,respectively.The extracted contact resistances were 8 MΩ,4.5 MΩ and 3 MΩ for OTFTs with three different kinds of annealed time,respectively.Lower contact resistance for OTFTs with annealed time of 10 h can be explained by the fact that longtime annealing can reduce the impurity in the semiconductor layer and lower the contact barrier between electrodes and semiconductor layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
