Abstract
The influence of annealing time on charge transport properties of solution-processed TipsPentacene was investigated by the measured J-Vproperty of p+Si/PEDOT∶PSS/Tips-PEN/Ag.The results show that with the increasing bias voltage,the J-Vcurves of the devices annealed for 2and 5h in double-logarithmic scale exist different regions,where slopes are 2,larger than 3and 2successively,but the curve of the device annealed for more than 10hdoesn't have initial region with the slope equal to 2.Using Space Charge Limited Current model,charge transport mechanisms in different regions were analyzed,and the hole trap densities and mobilities were extracted.Annealed for more than 10h, material has the lowest trap density of 5.70×1018/cm3 and the maximum hole mobility of 1.68×10-4 cm2/(V·s).Meanwhile,the transport mechanism of the material annealed for more than 10hchanging shows that the single trap density,relevant to solvent residues,deduces considerably.
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