Tip-induced passivation of dangling bonds on hydrogenated Si(100)-2 × 1

Abstract

Using combined low temperature scanning tunneling microscopy and atomic force microscopy (AFM), we demonstrate hydrogen passivation of individual, selected dangling bonds (DBs) on a hydrogen-passivated Si(100)-2 × 1 surface (H–Si) by atom manipulation. This method allows erasing of DBs and thus provides a promising scheme for error-correction in hydrogen lithography. Both Si-terminated tips (Si tips) for hydrogen desorption and H-terminated tips (H tips) for hydrogen passivation are created by deliberate contact to the H–Si surface and are assigned by their characteristic contrast in AFM. DB passivation is achieved by transferring the H atom that is at the apex of an H tip to the DB, reestablishing a locally defect-free H–Si surface.