Abstract
AbstractA microplasma printer is employed to deposit thin film patterns of TiO2 by titanium tetra‐isopropoxide and N2/O2 plasma at atmospheric pressure. The setup is adopted to carry out deposition in two configurations, namely under chemical vapor deposition (CVD) and atomic layer deposition (ALD) modes. The properties of TiO2, as well as the patterning resolution, are investigated. The amorphous TiO2 deposited in the CVD mode contains a relatively high level of impurities (residual carbon content of 5–10 at.%) and is characterized by a low refractive index of 1.8. With the ALD mode on the other hand, TiO2 is obtained with a low level of impurities (<1 at.% C and <2 at.% N), a refractive index of 1.98, and a growth per cycle of 0.15 nm. Furthermore, the spatial resolution for a 8‐nm‐thick film is determined by X‐ray photoelectron spectroscopy line scan and found to be equal to 2,000 and 900 µm for the CVD and ALD modes, respectively. This study can be regarded as the first step toward area‐selective CVD and ALD of TiO2 by a microplasma printer, which can be further explored and extended to other material systems.
Highlights
Direct deposition of thin film patterns has recently become a subject of extensive research.[1,2] Many areas ranging from semiconductor to biomedical applications require fabrication of patterned microstructure and nanostructures.[3,4,5] Besides applications which require nanoscale patterns, a broad range of devices such as thin film transistors (TFTs),[6,7] solar cells,[8] sensors,[9] and microfluidic channels[10,11] demand micron‐scale patterns in their structures
ALD, atomic layer deposition; CVD, chemical vapor deposition; TTIP, titanium tetra‐isopropoxide and the substrate was exposed to TTIP and O2 plasma by moving the head back and forth between two areas spatially separated by a N2 gas flow (Figure 2b1 and b2)
The atmospheric pressure plasma‐enhanced CVD of TiO2 films was performed on glass substrates by flowing TTIP with and without O2
Summary
Direct deposition of thin film patterns has recently become a subject of extensive research.[1,2] Many areas ranging from semiconductor to biomedical applications require fabrication of patterned microstructure and nanostructures.[3,4,5] Besides applications which require nanoscale patterns, a broad range of devices such as thin film transistors (TFTs),[6,7] solar cells,[8] sensors,[9] and microfluidic channels[10,11] demand micron‐scale patterns in their structures. ALD, atomic layer deposition; CVD, chemical vapor deposition; TTIP, titanium tetra‐isopropoxide and the substrate was exposed to TTIP (carried by 25 sccm N2) and O2 plasma by moving the head back and forth between two areas spatially separated by a N2 gas flow (Figure 2b1 and b2).
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