TiO x -based self-rectifying memory device for crossbar WORM memory array applications* *Project supported by the National Natural Science Foundation of China (Grant Nos. 61774079 and 61664001), the Science and Technology Plan of Gansu Province, China (Grant No. 20JR5RA307), and the Key Research and Development Program of Gansu Province, China (Grant No. 18YF1GA088).

Abstract

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO x /W structure with self-rectifying property is demonstrated for write-once-read-many-times (WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state (LRS) permanently with a rectification ratio as high as 104 at ± 1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO x /W interface and the Schottky contact at Pt/TiO x interface. The results in this paper demonstrate the potential application of TiO x -based WORM memory device in crossbar arrays.