Abstract
通过在PIN结构非晶硅(a-Si)电池的透明导电电极(TCO)和P-型非晶Si层间插入一层Nb掺杂的TiO2层，用于改善界面性质并提高电池转化效率。系统研究了不同厚度的Nb掺杂TiO2层薄膜的透光性以及在有光照和无光照时的I-V特性。此外，也比较了具有相同厚度的Nb-TiO2，Zn-TiO2以及纯的TiO2薄膜的光电响应。研究结果表明，厚度为6 nm的Nb-TiO2纳米薄膜具有最佳的光电响应。具有不同厚度Nb-TiO2插入层的非晶硅薄膜电池的性能测试表明，插入6 nm厚Nb-TiO2纳米薄膜的电池有效减小了寄生串联电阻，改善了填充因子，相比无插入层电池光电转化效率提高了8%。 In the present work, a layer of Nb-doped TiO2 nano-film has been inserted between TCO and P-Si layers in the amorphous Si solar cell with PIN structure to improve the interface properties and enhance the conversion efficiency. The transmittances of Nb-doped TiO2 thin films with various thicknesses were measured and the corresponding I-V curves with and without light illumination were compared. In addition, the photoelectric response was compared for Nb-TiO2, Zn-TiO2 and pure TiO2 nano-films with the same thickness. It was found that Nb-TiO2 film with thickness of 6 nm has the best photoelectric response. The conversion efficiency of the amorphous Si solar cell with various Nd-doped TiO2 thicknesses showed that the cell inserted with 6 nm Nd-TiO2 layer effectively reduces the series resistance, improves the filling factor and enhances the conversion efficiency by 8% compared with the cell without inserted layer.
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