Abstract
A multi-layered Ti (50nm)/Ni (50nm)/Ti (50nm)/Au (50nm) metallic contact to Al-doped ZnO thin films (ND=3.64×1019cm−3) was reported in this paper. The as-deposited Ti/Ni/Ti/Au scheme showed a specific contact resistivity of 2.07×10−4Ωcm2. And a lowest specific contact resistivity of 6.69×10−5Ωcm2 was obtained after annealing at 500°C. The specific contact resistivity showed a decreasing tendency with the annealing temperature up to 500°C. However, for the sample annealed at above 600°C, the I–V curves revealed gradual Schottky transformation. Interface diffusions and reactions induced by annealing treatment were found to be responsible for the decrease of Ohmic contact resistivity and the Schottky transformation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
