Abstract
Radio-tin-doped single crystals of GaAs have been grown by the LEC technique from melts of varying composition. Carrier concentration and Sn distribution determined by radio-counting and autoradiography are reported and analysed to show that Sn-related acceptors are incorporated to give a compensation ratio of N A N D = 0.24+-0.03 independent of doping level and of melt composition. These concentrations are significantly in excess of a non-Sn-related residual acceptor - believed to be C As - which is shown to be present in the crystals at a level of 1.6x10 16 cm -3. Modified Sheil plots are used to show that the melt composition appears to move progressively toward As-richness as growth proceeds. The distribution coefficient for tin in crystals growing from a stoichiometric melt is determined to be 4.0x10 -3.
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