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Abstract
Silicon-doped (100) GaAs single crystals up to two inches in diameter, dislocation and striation free, were grown by a low temperature gradient LEC technique. The crystals were characterized by etching technique, x-ray topography, SIMS, and Hall measurements. LED and LD devices fabricated on the crystal performed as well as those fabricated on silicon doped boat grown crystals. These LEC GaAs crystals have been demonstrated to be suitable for LED and LD device applications.
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