Abstract
Extreme ultraviolet lithography semiconductor manufacturing requires a 13.5nm light source. Laser-produced plasma emission from Sn V–Sn XIV ions is one proposed industry solution. The effect of laser pulse width and spatial profile on conversion efficiency is analyzed over a range of power densities using a two-dimensional radiative magnetohydrodynamic code and compared to experiment using a 1.064μm, neodymium:yttrium aluminium garnet laser on a planar tin target. The calculated and experimental conversion efficiencies and the effects of self-absorption in the plasma edge are compared. Best agreement between theory and experiment is found for an 8.0ns Gaussian pulse.
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