Abstract
We have made a systematic study of the tin doping of GaAs layers grown on GaAs(111)A substrates using molecular beam epitaxy (MBE). A series of samples were grown with a range of substrate temperatures (from 460 to 620°C), As:Ga flux ratios (5:1 to 25:1) and tin concentrations (10 16 to 10 20 atoms cm −3). Layers grown on (111)A surfaces were n-type (in contrast to silicon doping) but with carrier concentrations dependent on growth conditions. We have used secondary ion mass spectrometry (SIMS) measurements to confirm the concentration of tin incorporated and its distribution within the layers.
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