Abstract
GaAs epilayers have been succesfully grown by chemical beam epitaxy (CBE) using unprecracked monoethylarsine, which appears to be a viable replacement for arsine in CBE applications. Undoped GaAs epilayers were grown using unprecracked monoethylarsine (MEAs), trimethylgallium (TEG) at growth temperatures of 540 to 660°C, and V/III ratios from 5 to 30. All films grown using TMG under these conditions were p-type. n-Type background doping was also observed in TEG-grown epilayers with low carbon concentration. Secondary ion mass spectrometry and photoluminescence measurements of films grown by MEAs show that the carbon concentration is less than that in epilayers grown by precracked arsine. Intermediates like dihydrides from MEAs decomposed on the surface are considered to supply hydrogen atoms and hydrides during growth, which may remove other carbon containing species.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
