Abstract
To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector. We developed a simulation software—RASER (RAdiation SEmiconductoR)—to simulate the time resolution of planar and 3D 4H-SiC detectors with different parameters and structures, and the reliability of the software was verified by comparing the simulated and measured time-resolution results of the same detector. The rough time resolution of the 3D 4H-SiC detector was estimated, and the simulation parameters could be used as guideline to 3D 4H-SiC detector design and optimization.
Highlights
The main challenges of detectors close to the beam for future high-energy colliders lie in maintaining a high time and/or spatial resolution after large irradiation fluence and the requirement of a complex cooling system to sustain a low-temperature environment and to ensure these detectors work properly
We simulated the effects of different parameters such as temperature, voltage, and column spacing on the time resolution, as a reference for manufacturing 3D 4H-silicon carbide (SiC) detectors
The 3D 4H silicon carbide (4H-SiC) detector has the potential to achieve a good time resolution and high radiation resistance operating at room temperature to meet the challenges of future highenergy collider experiments
Summary
The main challenges of detectors close to the beam for future high-energy colliders lie in maintaining a high time and/or spatial resolution after large irradiation fluence and the requirement of a complex cooling system to sustain a low-temperature environment and to ensure these detectors work properly. The 3D structure decouples the thickness of detector and the distance between electrodes It can reduce the drift time of charge carriers and increase the deposited energy in the detector simultaneously. The 4H silicon carbide (4H-SiC) has a high atomic displacement threshold energy, which can decrease the defects generated by irradiation, and 4H-SiC is potentially thought of as radiation-resistant material [15]. The saturated electron velocity of 4H-SiC at 300 K is 2 × 107 cm·s−1 , close to twice as much as silicon [9] This will reduce the drift time, reduce the carrier trapping effect, and enhance time response sensitivity, which improves the radiation hardness and the timing performance of detector. The 3D 4H-SiC detector is one of the most promising device types to be a radiation-resistant high-precision time resolution detector that operates at room temperature. We simulated the time resolution of 3D 4H-SiC detectors with various structures and parameters, and the results would serve as a guideline for 3D 4H-SiC detector design and optimization
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
