Abstract
Laser-induced lattice deformation generating acoustic pulses has been studied by time-resolved X-ray diffraction method using a brilliant synchrotron radiation source. We constructed a time-resolved X-ray diffraction system equipped with a synchronized femtosecond pulsed laser at an undulator beamline of SPring-8 facility, and observed laser-induced acoustic pulse in a semiconductor wafer of GaAs, where the laser irradiation causes initial strain of expansion with a response time of around 200 ps. High resolution X-ray diffractometry in asymmetric configuration combined with laser-pump X-ray probe method revealed that the strain is formed with coherent longitudinal acoustic phonons and lattice expansion along the surface normal. The laser power dependence shows the saturation of the lattice expansion ratio with the lengthened relaxation time for high power excitation.
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