Abstract
Nanosecond surface structural changes during Q-switched laser annealing of a Si{111} crystal are studied with two-dimensional, time-resolved reflection of high-energy electron diffraction (RHEED) patterns obtained in real time synchronously with time-resolved optical reflectivity measurements. The detected Debye-Waller effect indicates the existence of a thermal process that results in melting of the surface. A transient crystalline surface phase is observed prior to recrystallization of the initial superstructure.
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