Kinetics of solid phase regrowth of self-ion-implanted amorphous SiC during low temperature furnace annealing

Abstract

The solid phase regrowth (SPR) model for the amorphous SiC phase induced by self-ion-implantation is shown. This was derived from in situ time-resolved optical reflectivity (TROR) measurements, and the crystallinity evaluation method based on Raman spectrometry and Rutherford backscattering spectrometry (RBS). The roughness of an amorphous–recrystalline layer interface was monitored during a heat treatment. By the TROR measurements, it was proven that the roughness of moving interface increases during the SPR. Raman spectrometry measurements have confirmed that the polytype of the SPR layer is the same as that of the substrate. RBS channeling measurements have made it clear that the fraction of c-axis orientation in the SPR layer was about 13%.