Abstract
We measured time-resolved mid-infrared photoluminescence (PL) from highly strained InAs/InGaAs quantum wells (QWs) grown on InP substrates with a wavelength up-conversion technique. The InAs QWs at 4 K exhibit a narrow PL peaked at a wavelength of 2.125 μm and a PL lifetime as long as 1.1 ns, which supports high homogeneity of the QW thickness and few defects. As the pump fluence increases, a fast PL decay appears within the first 200 ps due to Auger recombination. The temperature dependence of the PL intensity and PL decay reveals interfacial nonradiative trap states in the QWs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
