Abstract
Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 °C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH 3, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 μm were observed at room temperature (RT) from a 9 nm InAs double quantum well (DQW) in a separate confinement hetero-structure (SCH) structure.
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