Abstract
In x Ga 1−x N/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy were investigated by x-ray reflectometry and high-resolution x-ray diffractometry. The combination of both analysis methods allows a very precise determination of the structural parameters of the layer systems. From a systematic variation of the growth temperature from 760 to 840 °C and deposition times from 15 to 200 s, a temperature-dependent time delay of the indium incorporation was observed. Preferentially, at lower growth temperatures, indium seems to be accumulated at the GaN surface before the onset of the InGaN quantum well growth. The growth delay increases with decreasing growth temperature.
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