TIME—Tunable Inductors Using MEmristors

Abstract

Memristors have proven to be an attractive feature for memory, logic-in-memory, and neuromorphic computing. Recently, radio-frequency memristive switches (RFMSs) have exhibited promising high-frequency performance, opening the possibility of their use in radio-frequency integrated circuit applications. In this paper, we present two novel topologies of Tunable Inductors using MEmristors, the memristive–via the switched tunable inductor and the multi-layer stacked inductor switched by an RFMS single-pole double-throw. The two inductor topologies are fully passive and are tuned by electrochemical metallization memristors. Memristive devices improve the performance of tunable inductors, as they provide low-area overhead, low-energy switching, and non-volatility, resulting in more compact and energy-efficient devices. The topologies are implemented and simulated in a momentum 3-D planar electromagnetic simulator. Simulation results show a maximum tunability of 296%, a quality factor of 18 at 5 GHz, and self-resonant frequency above 8.4 GHz.