Abstract
High-quality factor miniaturised inductors are prerequisites of radio frequency integrated circuit applications. This Letter presents a novel fractal stacked inductor using modified Hilbert space filling curve. The proposed inductor achieves higher inductance value and good quality factor because of mutual inductance between plural metal layers and the reduced parasitic resistance. The results show that more than double improvement in L over conventional fractal inductors and more than double improvement in quality factor value over conventional series stack construction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
