Abstract
Laser assisted crystal growth and phase transformation of CuInSe2 from thin layers of copper, indium and selenium have been examined in time domain. Such study has not been reported before for any system. Transmitted intensity at wave length of maximum transmittance of CuInSe2 was recorded at the interval of 0.5 ms during the entire process of phase transformation. It has been found that for a threshold power of 160 W/cm2, 500 ms are reguired to convert a system into a thin film of CuInSe2. The final product was examined by Raman spectroscopy. Substantial intermixing of the constituent elements takes place at about 300 ms. If the film is further radiated, then defect states are created causing a considerable reduction in the transmittance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
