Abstract
We report time-resolved luminescence measurements of MBE-grown ZnTe/GaSb. Above-bandgap excitation is provided by second-harmonic generation using infrared pulses from a Ti:sapphire laser. Cooling of the hot-carrier distribution is observed on a picosecond time-scale, and is seen to be limited by phonon bottle-necking at these carrier densities, allowing an estimate of the LO phonon lifetime in this material.
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