Abstract
The authors present an experimental study of the time resolved photocurrent and its Fourier spectrum in dc-biased semi-insulating GaAs under multiple high-field domains photoexcitation. It is observed that nanosecond duration light interference pattern induces subnanosecond instabilities on the falling slope of the photocurrent pulse only when the external dc field reaches a threshold field value, i.e., when a transient multi-domain structure drifting through the spatially modulated semiconductor is generated. The signal spectrum in the gigahertz range is broad but, if system parameters are set properly, the spectrum becomes stable and concentrated at a single frequency proportional to the spatial period of the light interference pattern and the drift velocity of the domains.
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