Time-resolved opto-electronic properties of poly(3-hexylthiophene-2,5-diyl): Fullerene heterostructures detected by Kelvin force microscopy

Abstract

Thin blend polymer films made of poly(3-hexylthiophene-2,5-diyl) (electron donor) and fullerene derivatives as electron acceptors ([6,6]-thienylC61 butyric acid methyl ester and [6,6]-thienylC71 butyric acid methyl ester) are prepared by the spin-coating technique on indium tin oxide covered glass substrates. Time-resolved photo-induced changes of surface potentials are detected by Kelvin force microscopy (KFM). Changes of surface potentials by 10–150 mV reveal different quality and kinetics of charge generation in the two blends in short (minutes) and long (hours) time periods. This is attributed to a combination of electron accumulation, trapping, and organic material degradation under ambient conditions. As KFM characterizes the blend films directly without metal contact layer, it reveals differences in the opto-electronic behavior of the blends, which are not detected by common photovoltaic cell characterization.