Abstract
Measurements of carrier recombination rates using time-resolved differential transmission are reported for an unintentionally doped mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice. Measurements at 77 K yield minority carrier lifetimes of 3 μs and 9 μs for the InAsSb alloy and InAs/InAsSb superlattice, respectively. The un-optimized InAsSb-based materials also exhibit long lifetimes (>850 ns) at temperatures up to 250 K, indicating the potential use for these materials as mid-wave infrared photodetectors with improved performance over current type-II superlattice photodetectors at both cryogenic and near-ambient operating temperatures.
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