Abstract
We measured time-resolved mid-infrared photoluminescence (PL) from highly strained InAs/InGaAs quantum wells (QWs) grown on InP substrates with a wavelength up-conversion technique. The InAs QWs at 4 K exhibit a narrow PL peaked at a wavelength of 2.125 μm and a PL lifetime as long as 1.1 ns, which supports high homogeneity of the QW thickness and few defects. As the pump fluence increases, a fast PL decay appears within the first 200 ps due to Auger recombination. The temperature dependence of the PL intensity and PL decay reveals interfacial nonradiative trap states in the QWs.
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