Abstract
A novel technique in time resolved luminescence spectroscopy called population mixing using a subpicosecond cw mode-locked dye laser has been developed and applied to p-type GaAs at low temperatures. Using this technique the relaxation lifetime for electron recombination was measured to be 39±7 ps for p-type GaAs with Zn at 6×1018 cm−3 hole concentration. This is comparable to the relaxation time measured by a streak camera.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
