Abstract
Abstract A capacitive coupling method is used to study the stationary and switching properties of n-MOS inverters in a laser scanning microscope. The microscopic images contain information about the spatial distribution of the surface potential, a mapping of logical states can be performed. The formation of the inversion channel of a n-MOS inverter with increasing gate voltage is observed with a voltage resolution better than 10 mV. The propagation of electrical pulses within the device under test and the switching behaviour of the inverters are investigated with a time resolution of 100 ps. The capacitive coupling method is contactless and no preparation of the device under test is necessary.
Published Version
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