Abstract
Time Resolved Imaging (TRI) allows real time imaging of transitions in CMOS gates. CMOS Technology trends has challenged this technique. Power Supply decrease has induced a strong reduction of photon emission related to MOS saturation mode and shifted emission to the infrared. In this paper we demonstrate the ability of new time resolved detector to overcome these limits allowing TRI of CMOS 45 nm device at low power supply voltage down to 0.7 Volts.
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