Abstract
The dynamic response of InAsP quantum dots, grown on InP(001) substrates by low-pressure metalorganic vapor phase epitaxy emitting around 1.55μm, is investigated by means of time-resolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1ns at low temperature to reach 4ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 23. These characteristics give evidence that such InAsP∕InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated nonradiative recombination up to room temperature.
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