Abstract
Abstract Silicon photomultipliers (SiPMs) have become an interesting alternative to conventional and micro-channel plate photomultipliers, proving to be a very good option for Cherenkov light based time-of-flight detectors. The important characteristic for this application is the intrinsic time resolution for a wide range of wavelengths (from below 250 nm up to about 600 nm). We present a study of the time resolution of two SiPMs: a 3 × 3 mm2 FBK SiPM-NUV3S and a 3.5 × 3.5 mm2 STMicroelectronics prototype SiPM. The measurement was performed for two representative wavelengths (280 nm and 420 nm) under the variation of SiPM overvoltage and light intensity . The measured transition time spread (TTS) of the devices was (285 ± 9) ps (FBK) and (154 ± 20) ps (STM). The time resolution dropped with increasing mean number of photoelectrons ( N pe ) as σ TTS N pe − 1 2 with saturation observed for high N pe . The obtained best time resolutions were (8 ± 1) ps and (4 ± 1) ps for the FBK and STM SiPM respectively at N pe of the order of 1 0 6 for 420 nm photons. The results for the two wavelengths were comparable, with 280 nm photons providing worse results at very high illumination.
Published Version
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