Time-of-flight analysis and modeling of photochemical hydrogen desorption from silicon(111) with an F 2 laser

Abstract

Listen

Translate article

Photochemical desorption of molecular hydrogen from Si(111)-(1×1):H surfaces was studied by pulsed F 2-laser irradiation at 157 nm. Determination of the fluence dependence of the yield and translational energy of desorbed species by time-of-flight (TOF) measurements allowed photothermal and photochemical desorption to be clearly distinguished. Numerical calculations of the transient surface heating by the method of finite differences are in good agreement with the measured TOF temperatures.